Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface.

Zandvliet, H.J.W. and Keim, E.G. and Silfhout van, A. (1990) Adsorption of atomic oxygen (N2O) on a clean Ge(001) surface. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 8 (3). pp. 2581-2584. ISSN 0734-2101

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Abstract:	We present the results of a study concerning the interaction of atomic oxygen (as released by decomposition of N2O ) with the clean Ge(001)2×1 surface at 300 K. Ellipsometry in the photon energy range of 1.5¿4 eV, surface conductance measurements and Auger electron spectroscopy (AES) have been used to monitor this solid¿gas reaction. Adsorption of N2O on the clean Ge(001) surface was found to terminate at monolayer coverage
Item Type:	Article
Copyright:	© 1990 American Vacuum Society
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/24056
Official URL:	http://dx.doi.org/10.1116/1.576674
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