Introduction of ramp-type technology in HTS quasiparticle injection devices

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Moerman, R. and Veldhuis, D. and Gerritsma, G.J. and Rogalla, H. (1999) Introduction of ramp-type technology in HTS quasiparticle injection devices. IEEE Transactions on Applied Superconductivity, 9 (2, Par). pp. 3644-3647. ISSN 1051-8223

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Abstract:Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.
Item Type:Article
Copyright:©1999 IEEE
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/24041
Official URL:http://dx.doi.org/10.1109/77.783818
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Metis ID: 128840