Epitaxial growth of oxides with pulsed laser interval deposition


Blank, Dave H.A. and Koster, Gertjan and Rijnders, Guus J.H.M. and Setten, Eelco van and Slycke, Per and Rogalla, Horst (2000) Epitaxial growth of oxides with pulsed laser interval deposition. Journal of Crystal Growth, 211 (1-4). pp. 98-105. ISSN 0022-0248

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:In this contribution, pulsed laser deposition (PLD) in combination with high-pressure reflective high-energy electron diffraction (RHEED) is used to study the influence of different parameters including background pressure, substrate temperature, and repetition rate on film growth behaviour. The results are used for a new approach to impose layer-by-layer growth using the high saturation of the deposited material by PLD in combination with a very fast deposition of the amount of material for completing exactly one unit cell. With this approach, which we will call pulsed laser interval deposition (PLID), we are able to deposit complex oxide materials in a layer-by-layer growth regime where normally island growth occurs.
Item Type:Article
Copyright:© 2000 Elsevier
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/23990
Official URL:http://dx.doi.org/10.1016/S0022-0248(99)00880-5
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 128789