Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

Share/Save/Bookmark

Musa, S. and Weerden van, H.J. and Yau, T.H. and Lambeck, P.V. (2000) Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification. IEEE Journal of Quantum Electronics, 36 (9). pp. 1089-1097. ISSN 0018-9197

[img]
Preview
PDF
269Kb
Abstract:Er-doped Al2O3 thin films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers. The deposition process has been optimized with respect to the requirements originating from the application of these multilayer structures as integrated optical amplifiers for the third telecom window, i.e., the wavelength range 1.52-1.55 ¿m. The films obtained at a substrate temperature of only 400°C are amorphous and show a homogenous structure, without columns or grains. For slabguides, background losses smaller than 0.25 dB/cm have been obtained, even without any annealing. A relatively broad luminescence band, having an FWHM of ~55 nm around the 1.533-¿m wavelength, has been measured. From gain versus pumping power curves, an upconversion coefficient lower then 20·10-25 m3/s has been derived, being half of the values reported up to now in the literature. Simulations based on experimentally determined material parameters and assuming a channel attenuation of 0.5 dB/cm indicate, for 0.24 at.% Er channel devices with an optimal channel length of 7.7 cm, an amplification of 8 dB at 1.533 ¿m for a pump wavelength of 1.48 ¿m, and a pump power of only 8.7 mW
Item Type:Article
Copyright:©2000 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/23949
Official URL:http://dx.doi.org/10.1109/3.863962
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 128748