Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures

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Boguslavskij, Yu.M. and Verhoeven, M.A.J. and Roesthuis, F.J.G. and Gerritsma, G.J. and Rogalla, H. (1994) Temperature and electric-field dependencies of PBCO c-axis resistivity in YBCO/PBCO/Au structures. Physica B: Condensed Matter, 194-19 (1). pp. 1115-1116. ISSN 0921-4526

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Abstract:The current-voltage characteristics of YBCO/PBCO/Au planar structures reflect the resistance behavior of PBCO in the c-axis direction. With increasing applied voltages the PBCO barrier shows a transition from thermally-activated hopping conductivity to an activationless-hopping regime. Variable-range hopping and weak-localization models are discussed to explain the experimental data. An account of the Lifshitz correlation in the hopping conductivity gives an satisfactory agreement with the junction resistivity for c-axis PBCO barrier thicknesses of 10 to 40 nm.
Item Type:Article
Copyright:© 1994 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/23765
Official URL:http://dx.doi.org/10.1016/0921-4526(94)90887-7
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Metis ID: 128564