Influence of PrBa2Cu3-xGaX07 barrier material on electrical behaviour of ramp-type Josephson junctions

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Verhoeven, M.A.J. and Boguslavskij, Yu.M. and Reuvekamp, E.M.C.M. and Gerritsma, G.J. and Rogalla, H. (1994) Influence of PrBa2Cu3-xGaX07 barrier material on electrical behaviour of ramp-type Josephson junctions. Physica B: Condensed Matter, 194-19 (1). pp. 1345-1346. ISSN 0921-4526

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Abstract:The use of PrBa2Cu3-xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3-xGaxO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junctions have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both critical current Ic and normal state resistance Rn are influenced by the doping level as well as the barrier thickness. The temperature dependence of the normal state resistance at different Ga doping levels and barrier thicknesses will be discussed.
Item Type:Article
Copyright:© 1994 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/23761
Official URL:http://dx.doi.org/10.1016/0921-4526(94)91002-2
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Metis ID: 128560