Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films

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Reuvekamp, E.M.C.M. and Boguslavskij, Yu.M. and Gerritsma, G.J. and Verhoeven, M.A.J. and Zandbergen, H.W. and Rogalla, H. (1993) Electrical resistivity of PrBa2Cu3-xGaxO7-y (001) and (105) oriented thin films. Journal of Alloys and Compounds, 195 . pp. 643-646. ISSN 0925-8388

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Abstract:In the past almost all studies on the anisotropy of the transport properties in 1-2-3 materials were performed on single crystals. This study is focused particularly on the anisotropy of the specific resistivity p as measured on almost single domain thin films of PrBa2Cu3-xGaxO7-y. Gallium doped PrBa2Cu3O7-y was deposited on (305) SrTiO3 to obtain (105) oriented, almost single domain thin films [1]. The films are deposited by rf magnetron sputtering in a one-step process, at low deposition rate. A relatively simple route for the preparation of single-phase gallium doped PrBa2Cu3O7-y target material by a citrate synthesis and pyrolysis [2] is presented.
Item Type:Article
Copyright:© 1993 Elsevier Science
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/23727
Official URL:http://dx.doi.org/10.1016/0925-8388(93)90820-D
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Metis ID: 128526