High-Tc thin films prepared by laser ablation: material distribution and droplet problem

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Blank, D.H.A. and IJsselsteijn, R.P.J. and Out, P.G. and Kuiper, H.J.H. and Flokstra, J. and Rogalla, H. (1992) High-Tc thin films prepared by laser ablation: material distribution and droplet problem. Materials Science and Engineering B: Solid-state materials for advanced technology, 13 (1). pp. 67-74. ISSN 0921-5107

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Abstract:The lateral material distribution of laser-deposited YBa2Cu3O7¿¿ films and the density of droplets coming from the target were studied by varying the laser pulse energy, the laser spot size and the target-to-substrate distance. Silicon wafers at ambient temperature were used as substrates to guarantee a large sticking coefficient of the particles. The deposition rate is found to depend linearly on the laser energy density E and quadratically on the spot size S at the target, whereas the droplet density is slightly dependent on E and increases linearly with 1/S, yielding a threshold energy of 0.9 J cm¿2. With a laser spot size of 7.15 mm2 and a laser energy density of 1.2 J cm¿2, we were able to reduce the number of droplets to one to two per 500 ¿m2 for a high quality high Tc film with a typical thickness of 100 nm.
Item Type:Article
Copyright:© 1992 Elsevier Science B.V.
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/23706
Official URL:http://dx.doi.org/10.1016/0921-5107(92)90106-J
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Metis ID: 128505