Comment on 'Nitric oxide adsorption on the Si(100)(2x1) surface - a vibrational study by Y. Taguchi, M. Fujisawa, Y. Kuwahara, M. Onchi and M. Nishijima'

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Wormeester, H. and Silfhout, A. van and Keim, E.G. and Sasse, A.G.B.M. (1990) Comment on 'Nitric oxide adsorption on the Si(100)(2x1) surface - a vibrational study by Y. Taguchi, M. Fujisawa, Y. Kuwahara, M. Onchi and M. Nishijima'. Surface Science Letters, 233 (233). L249-L250. ISSN 0167-2584

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Abstract:Both molecular and dissociative adsorption behaviour of NO on the Si(001)(2 × 1) surface at room temperature have been reported. This contradicting difference in adsorption behaviour was obtained from the application of different experimental methods. The attention must be focused on the various sample preparation techniques used and on the influence of primary excitation sources of the different experimental techniques applied on this adsorbed system.
Item Type:Article
Copyright:© 1990 Elsevier Science
Faculty:
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/23687
Official URL:http://dx.doi.org/10.1016/0039-6028(90)90631-H
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