Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110).

Keim, Enrico G. and Wormeester, Herbert and Silfhout van, Arend (1990) Chemical titration of clean silicon surfaces with N2O and O2: Atomic nature of "5x1" reconstructed Si(110). Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 8 (3). pp. 2747-2754. ISSN 0734-2101

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Abstract:	Using spectroscopic differential reflectometry (SDR), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) we have studied the room temperature adsorption behavior of N2O and O2 at the clean low-Miller index Si surfaces
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS) Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/23684
Official URL:	http://dx.doi.org/10.1116/1.576661
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Metis ID: 128483