Fabrication of a subminiature silicon condenser microphone using the sacrificial layer technique


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Scheeper, P.R. and Olthuis, W. and Bergveld, P. (1991) Fabrication of a subminiature silicon condenser microphone using the sacrificial layer technique. In: International Conference on Solid-State Sensors and Actuators, Digest of Technical Papers, TRANSDUCERS, June 24-27, 1991, San Fransisco, USA (pp. pp. 408-411).

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Abstract:The application of the sacrificial layer technique for the fabrication of a subminiature silicon condenser microphone with a plasma-enhanced chemical vapor deposited silicon nitride diaphragm has been investigated. Square diaphragms with dimensions from 0.6 to 2.6 mm and a thickness of 1 ¿m have been realized. Measurements on a microphone with a 2×2 mm diaphragm and a 1 ¿m airgap have shown that a sensitivity of 1.4 mV/Pa for low frequencies can be achieved with a low bias voltage (-2 V). The sensitivity decreases for high frequencies. This effect is probably due to the small airgap. Therefore, microphones with wider airgaps have to be developed to achieve a flat frequency response for the entire audio frequency range
Item Type:Conference or Workshop Item
Copyright:©1991 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/17272
Official URL:http://dx.doi.org/10.1109/SENSOR.1991.148898
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Metis ID: 114167