On the charge storage and decay mechanism in silicon dioxide

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Olthuis, W. and Bergveld, P. (1991) On the charge storage and decay mechanism in silicon dioxide. In: 7th International Symposium on Electrets, ISE, September 25-27, 1991, Berlin, Germany.

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Abstract:A mechanism for both the storage and the decay of charge in a charged silicon dioxide layer is proposed. The oxide layer needs neutral traps (NETs) to obtain stable trapped negative charge, after having been charged, resulting in an electret that can be applied in microphones. The hydrolysis of the silanol groups, followed by charge injection, results in an electrochemical reaction with immobile SiO as one of the reaction products. Decay of the stable charge thus obtained can occur by the clustering of water molecules at inner silanol groups, resulting in a conductive hydrogen bonded network, which eventually leads to the discharge of the electret
Item Type:Conference or Workshop Item
Copyright:©1991 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/17271
Official URL:http://dx.doi.org/10.1109/ISE.1991.167177
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Metis ID: 114166