The black silicon method II: The effect of mask material and loading on the reactive ion etching of deep silicon trenches
Jansen, Henri and Boer de, Meint and Burger, Johannes and Legtenberg, Rob and Elwenspoek, Miko (1994) The black silicon method II: The effect of mask material and loading on the reactive ion etching of deep silicon trenches. In: Micro and Nano Engineering.
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|Abstract:||Very deep trenches in Si with smooth controllable profiles are etched using a fluorine-based Reactive Ion Etcher(RIE). The effect of various mask materials and loading on the profile is examined using the Black Silicon Method. It is found that most metal layers have an almost infinite selectivity. When the aspect ratio of the trenches is beyond five, RIE lag is found to be an important effect. Evidence is found that this effect is caused by the bowing of incoming ions by the electrical field.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
|Link to this item:||http://purl.utwente.nl/publications/17196|
|Export this item as:||BibTeX|
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