Low temperature sacrificial wafer bonding for planarization after very deep etching


Share/Save/Bookmark

Spiering, V.L. and Berenschot, J.W. and Elwenspoek, M. and Fluitman, J.H.J. (1994) Low temperature sacrificial wafer bonding for planarization after very deep etching. In: IEEE Workshop on Micro Electro Mechanical Systems, MEMS, January 25-28, 1994, Oiso, Japan (pp. pp. 69-74).

open access
[img]
Preview
PDF
1MB
Abstract:A new technique, at temperatures of 150°C or 450°C, that provides planarization after a very deep etching step in silicon is presented. Resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes becomes possible. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of (1) polymer bonding followed by dry etching and (2) anodic bonding combined with KOH etching are discussed. The polymer bond method was applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges
Item Type:Conference or Workshop Item
Copyright:© 1994 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/17183
Official URL:http://dx.doi.org/10.1109/MEMSYS.1994.555600
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 114078