Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions

Share/Save/Bookmark

Boselli, Gianluca and Meeuwsen, Stan and Mouthaan, Ton and Kuper, Fred (1999) Investigations on Double-Diffused MOS (DMOS) transistors under ESD zap conditions. In: Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD, 1999, 28-30 Sept. 1999, Florida, USA.

[img]
Preview
PDF
852Kb
Abstract:In this paper we analyzed, through experiments and 2D simulations, the behaviour under high reverse voltages of a DMOS transistor. It turned out that the drift diffusion region (resistor) between the drain contact and p-diffusion region (PI) plays an important role both in the switching-on of the parasitic bipolar structure and in the failure mechanism
Item Type:Conference or Workshop Item
Copyright:© 1999 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/17078
Official URL:http://dx.doi.org/10.1109/EOSESD.1999.818984
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 113966