Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses


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Houtsma, V.E. and Holleman, J. and Akil, N.A. and Le Minh, P. and Zieren, V. and Berg, A. van den and Wallinga, H. and Woerlee, P.H. (1999) Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses. In: International Semiconductor Conference, CAS 1999, 5-9 October 1999, Sinaia, Romania (pp. pp. 461-465).

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Abstract:Silicon nanometer-scale diodes have been fabricated to emit light in the visible range at low power consumption. Such structures are candidates for emitter elements in Si-based optical interconnect schemes. Spectral measurements of Electroluminescence (EL) on the reverse-biased nanometer-scale diodes brought into breakdown have been carried out over the photon energy range of 1.4-2.8 eV. Previously proposed mechanisms for avalanche emission from conventional silicon p-n junctions are discussed in order to understand the origin of the emission. Also the stability of the diodes has been tested. Results indicate that our nanometer-scale diodes are basically high quality devices. Furthermore due to the nanometer-scale dimensions, very high electrical fields and current densities are possible at low power consumption. This makes these diodes an excellent candidate to be utilized as a light source in Si-based sensors and actuator applications
Item Type:Conference or Workshop Item
Copyright:© 1999 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/17075
Official URL:http://dx.doi.org/10.1109/SMICND.1999.810586
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