Rise-time effects in ggnMOSt under TLP stress

Boselli, G. and Mouthaan, A.J. and Kuper, F.G. (2000) Rise-time effects in ggnMOSt under TLP stress. In: 22nd International Conference on Microelectronics, 2000, 14-17 May, 2000, Nis, Serbia.

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Abstract:	In this paper the main mechanisms that lead the turn on of the parasitic bipolar transistor of a grounded gate nMOS transistor (ggnMOS) under TLP stress have been analyzed in detail in the sub-nanoseconds range by means of a mixed-mode simulator. We showed that the breakdown voltage of the ggnMOS measured in static conditions would underestimate the maximum voltage across the protection structure obtained by TLP stress, depending on the rise-time of the applied pulse
Item Type:	Conference or Workshop Item
Copyright:	© 2000 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/17073
Official URL:	http://dx.doi.org/10.1109/ICMEL.2000.840588
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