Modelling of dishing for metal chemical mechanical polishing


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Nguyen, Viet H. and Velden, Peter van der and Daamen, Roel and Kranenburg, Herma van and Woerlee, Pierre H. (2000) Modelling of dishing for metal chemical mechanical polishing. In: International Electron Devices Meeting, 2000. IEDM Technical Digest, December 11 to 13, 2000, San Francisco, USA (pp. pp. 499-502).

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Abstract:In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter
Item Type:Conference or Workshop Item
Copyright:© 2000 IEEE
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Link to this item:http://purl.utwente.nl/publications/17068
Official URL:http://dx.doi.org/10.1109/IEDM.2000.904364
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Metis ID: 113954