Modelling of dishing for metal chemical mechanical polishing

Nguyen, Viet H. and Velden van der, Peter and Daamen, Roel and Kranenburg van, Herma and Woerlee, Pierre H. (2000) Modelling of dishing for metal chemical mechanical polishing. In: International Electron Devices Meeting, 2000. IEDM Technical Digest, December 11 to 13, 2000, San Francisco, USA.

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Abstract:	In this paper, a physical model for the development of dishing during metal chemical mechanical polishing (CMP) is proposed. The main assumption of the model is that material removal occurs predominantly at the pad/wafer contacts. The distribution of pad/wafer contact size is studied first. This distribution is used as an input for a model of the dependence for the material removal rate on the line width. A relation that describes the development of dishing as a function of overpolish time will be presented. The model describes to a great accuracy the observed dishing effects, using one free parameter
Item Type:	Conference or Workshop Item
Copyright:	© 2000 IEEE
Research Group:	Semiconductor Components (SC) Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/17068
Official URL:	http://dx.doi.org/10.1109/IEDM.2000.904364
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Metis ID: 113954