A Novel Silicon Electro-Optic Device for sensor applications


LeMinh, P. and Akil, N. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2000) A Novel Silicon Electro-Optic Device for sensor applications. In: IEEE 13th Annual Meeting Lasers and Electro-Optics Society, LEOS 2000, 13-16 November 2000, Rio Grande, Puerto Rico (pp. pp. 523-524).

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Abstract:Though R. Newman reported the avalanche breakdown light emission in a conventional p-n junction diode half a century ago, there are almost no successful applications of this phenomenon in industry. We report the realization of a novel silicon electro-optic device, explicitly the integration of light emitting diode antifuse and photodetector on a single silicon wafer by CMOS technology, and the first important results. The diode antifuse (called antifuse to the rest of this contribution) resembles a conventional diode but has a small size of a few tens of nanometers, which permits easy collection of all emitted photons
Item Type:Conference or Workshop Item
Copyright:©2000 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/17066
Official URL:https://doi.org/10.1109/LEOS.2000.893946
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