Degradation of -Si:H TFTs caused by electrostatic discharge


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Tosic, N. and Kuper, F.G. and Mouthaan, A.J. (2000) Degradation of -Si:H TFTs caused by electrostatic discharge. In: 22nd International Conference on Microelectronics, 2000, 14-17 May 2000 , Nis, Yugoslavia (pp. pp. 359-362).

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Abstract:This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified
Item Type:Conference or Workshop Item
Copyright:©2000 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/17063
Official URL:http://dx.doi.org/10.1109/ICMEL.2000.840589
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Metis ID: 113949