Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

Houtsma, V.E. and Holleman, J. and Salm, C. and Haan de, I.R. and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA.

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Abstract:	In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -Vg of our devices. Time-to-breakdown data are presented and discussed
Item Type:	Conference or Workshop Item
Copyright:	©1999 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/17016
Official URL:	http://dx.doi.org/10.1109/IEDM.1999.824192
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