Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material


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Houtsma, V.E. and Holleman, J. and Salm, C. and Haan, I.R. de and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA (pp. pp. 457-460).

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Abstract:In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier Tunneling (MCT) from the gate is proposed for the I-V and SILC characteristics at -Vg of our devices. Time-to-breakdown data are presented and discussed
Item Type:Conference or Workshop Item
Copyright:©1999 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/17016
Official URL:http://dx.doi.org/10.1109/IEDM.1999.824192
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Metis ID: 113901