Breakdown and recovery of thin gate oxides


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Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Woerlee, Pierre and Wallinga, Hans (2000) Breakdown and recovery of thin gate oxides. In: 30th European Solid-State Device research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 116-119).

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Abstract:Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed
within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
Item Type:Conference or Workshop Item
Copyright:© 2000 IEEE
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Link to this item:http://purl.utwente.nl/publications/17004
Official URL:http://dx.doi.org/10.1109/ESSDERC.2000.194728
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Metis ID: 113889