Breakdown and recovery of thin gate oxides

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Woerlee, Pierre and Wallinga, Hans (2000) Breakdown and recovery of thin gate oxides. In: 30th European Solid-State Device research Conference, 11-13 September 2000, Cork, Ireland.

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Abstract:	Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
Item Type:	Conference or Workshop Item
Copyright:	©2000 IEEE
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/17004
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Metis ID: 113889