Early resistance change and stress/electromigration evolution in near bamboo interconnects

Petrescu, V. and Mouthaan, A.J. and Dima, G. and Govoreanu, B. and Mitrea, O. and Profirescu, M. (1997) Early resistance change and stress/electromigration evolution in near bamboo interconnects. In: International Semiconductor Conference, CAS, 7-11 Oct. 1997, Sinaia Romania.

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Abstract:	A complete description for early resistance change and mechanical stress evolution in near-bamboo interconnects, related to the electromigration, is given in this paper. The proposed model, for the first time, combines the stress/vacancy concentration evolution with the early resistance change of the Al line with a near-bamboo microstructure, which has been proven to be a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) stress
Item Type:	Conference or Workshop Item
Copyright:	©1997 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/16985
Official URL:	http://dx.doi.org/10.1109/SMICND.1997.651013
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Metis ID: 113870