2D Modelling of Mechanical Stress Evolution and Electromigration in Confined Aluminium Interconnects

Petrescu, V. and Mouthaan, A.J. (1997) 2D Modelling of Mechanical Stress Evolution and Electromigration in Confined Aluminium Interconnects. In: 21st International Conference on Microelectronics, MIEL 1997, NIS, Yugoslavia, 14-17 September 1997, Nis, Serbia.

Preview

PDF
392Kb

Abstract:	A complete description for mechanical stress evolution and electromigration in confined Al interconnects, taking into account the microstructure features, is presented in this paper. In the last years there were proposed several 1D models for the time-dependent evolution of the mechanical stress in Al interconnect lines, since the time to failure of the line can be related to the time a critical value of the stress is reached. The present paper extends and improves the existing models in 2D using a two dimensional simulator based on finite element method. Also, the model makes an attempt to relate the stress/vacancy concentration evolution with the early resistance change of the Al line
Item Type:	Conference or Workshop Item
Copyright:	©1997 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/16984
Official URL:	http://dx.doi.org/10.1109/ICMEL.1997.632920
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 113869