A drift free nernstian iridium oxide PH sensor


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Hendrikse, J. and Olthuis, W. and Bergveld, P. (1997) A drift free nernstian iridium oxide PH sensor. In: Transducers '97, International Conference on Solid State Sensors and Actuators, June 16-19, 1997, Chicago, USA (pp. pp. 1367-1370).

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Abstract:A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements
Item Type:Conference or Workshop Item
Copyright:©1997 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/16879
Official URL:http://dx.doi.org/10.1109/SENSOR.1997.635491
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Metis ID: 113764