High force 10 kN piezoresistive silicon force sensor with output independent of force distribution


Zwijze, R.A.F. and Wiegerink, R.J. and Krijnen, G.J.M. and Berenschot, J.W. and Boer, M.J. de and Elwenspoek, M.C. (2000) High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. In: Micromachined Devices and Components VI, 18 September 2000, Santa Clara, CA, USA (pp. pp. 47-58).

[img] PDF - Published Version
Restricted to UT campus only
: Request a copy
Abstract:A 10kN silicon force sensor is realized in which the force is measured by compressing a meander shaped polysilicon strain gage. A second gage which is not loaded, is used for temperature compensation, for compensation of bending and stretching stresses in the chip and for common changes in zero load resistor values. It is shown that the output of the bridge is a linear function of the force and is independent of the force distribution on the chip. By measuring the resistance change along both gages, the force distribution on the chip can be determined so that it can be detected whether the sensor has an oblique load or not. The production process of the chip is simple and robust. A package is designed to apply the load. Hysteresis experiments are performed at four temperatures between 25 $DEGC and 49 $DEGC. Hysteresis measurements at room temperature are in close agreement with finite element calculations. The maximum hysteresis error is within +/- 0.14% of the fill-scale output (fso). Creep was tested by loading it five times. It follows that creep is smaller than 0.01% of the fso. The total error including interpolation error is within +/- 0.23%.
Item Type:Conference or Workshop Item
Copyright:© 2003 SPIE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/16246
Official URL:https://doi.org/10.1117/12.395640
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 113131