Generating all 2-transistor circuits leads to new wide-band CMOS LNAs

Bruccoleri, F. and Klumperink, E.A.M. and Nauta, B. (2000) Generating all 2-transistor circuits leads to new wide-band CMOS LNAs. In: 26th European Solid-State Circuits Conference, ESSCIRC 2000, 19-21 Sept. 2000 , Stockholm, Sweden.

Preview

PDF
138Kb

Abstract:	This paper presents a methodology that systematically generates wide-band CMOS Low Noise Amplifiers (LNAs), assuming that MOSFETs are exploited as a Voltage Controlled Current Source (VCCS). Using graph theory, ALL 2-VCCS LNAs are generated, and subsequently implemented using 2 NMOS transistors. Next to well-known circuits, two new wide-band LNAs are found. The most promising has been realized using an industrial 0.35µm CMOS process. Measurements show a 900 MHz bandwidth, VSWRIN<1.6, variable forward gain from 6 to 11dB and reverse isolation better than 30dB. At maximum gain, IIP2 is +15dBm and IIP3 is +1dBm, while NF is better than 4.5dB. The LNA drains only 1.5mA at 3.3V supply and the die area is 0.06mm2.
Item Type:	Conference or Workshop Item
Copyright:	© 2000 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/16034
Official URL:	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1471275
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 112916