On the reduction of the third order distortion in a CMOS triode transconductor


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Mensink, Clemens H.J. and Klumperink, Eric A.M. and Nauta, Bram (1996) On the reduction of the third order distortion in a CMOS triode transconductor. In: IEEE International Symposium on Circuits and Systems, ISCAS 1996, May 12-15, 1996, Atlanta, Georgia, USA.

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Abstract:This paper presents a linearisation technique which aims to cancel out the third order distortion of a CMOS triode transconductor due to the mobility reduction effect of the conversion transistors. The transconductor consist of a parallel operating voltage and current biased differential pair. It is realised in a 0.8 ¿m CMOS process. Simulation results, obtained with state-of-the-art MOS models, show a significant deviation from the measurement results. It is shown that the third order distortion prediction of the generally used `&thetas;-model' for mobility reduction is rather poor in the triode region
Item Type:Conference or Workshop Item
Copyright:©1996 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/15975
Official URL:http://dx.doi.org/10.1109/ISCAS.1996.539869
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Metis ID: 112857