Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Gierkink, S.L.J. and Klumperink, E.A.M. and Ikkink, T.J. and Tuijl van, A.J.M. (1998) Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator. In: 24th European Solid-State Circuits Conference, ESSCIRC 1998, October 15-22, 1998, The Hague The Netherlands.

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Abstract:	The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.
Item Type:	Conference or Workshop Item
Copyright:	©1998 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/15969
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Metis ID: 112851