Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

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Gierkink, S.L.J. and Wel, A.P. van der and Hoogzaad, G. and Klumperink, E.A.M. and Tuijl, A.J.M. van (1998) Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation. In: IEEE International Symposium on Circuits and Systems, ISCAS 1998, May 31 - June 3, 1998, Monterey, USA (pp. pp. 185-188).

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Abstract:Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband
Item Type:Conference or Workshop Item
Copyright:©1998 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15962
Official URL:http://dx.doi.org/10.1109/ISCAS.1998.704241
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Metis ID: 112844