Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques

Klumperink, Eric A.M. and Gierkink, S.L.J. and Wallinga, H. and Nauta, B. (1998) Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques. In: 9th IEEE/ProRISC Workshop on Circuits, Systems and Signal Processing, 25-27 November 1998, Mierlo, The Netherlands.

Preview

PDF
186Kb

Abstract:	Switched Biasing is presented as a technique for reducing the 1/f noise in MOSFETS. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its 1/f noise!! The history of the discovery of the effect and the main experimental results obtained so far will be reviewed.
Item Type:	Conference or Workshop Item
Copyright:	© 1998 STW
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/15959
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 112841