New design methodologies in <111>-oriented silicon wafers

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Oosterbroek, R.E. and Berenschot, J.W. and Nijdam, A.J. and Pandraud, G. and Elwenspoek, M.C. and Berg van den, A. (1999) New design methodologies in <111>-oriented silicon wafers. In: Micromachining and Microfabrication 1999, 20 September 1999, Santa Clara, CA, USA.

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Abstract:New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the <100>-crystal orientation, supplemented with examples demonstrate the high potential of using <100> oriented wafers in microsystem design.
Item Type:Conference or Workshop Item
Copyright:© 1999 SPIE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/15832
Official URL:http://dx.doi.org/10.1117/12.361243
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