Reference field effect transistor based on chemically modified ISFETs

Share/Save/Bookmark

Skowronska-Ptasinska, Maria and Wal, Peter D. van der and Berg, Albert van den and Bergveld, Piet and Sudhölter, Ernst J.R. and Reinhoudt, David N. (1990) Reference field effect transistor based on chemically modified ISFETs. Analytica Chimica Acta, 230 . pp. 67-73. ISSN 0003-2670

open access
[img]
Preview
PDF
571kB
Abstract:Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.

Item Type:Article
Copyright:© 1990 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/15304
Official URL:http://dx.doi.org/10.1016/S0003-2670(00)82762-2
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 112179