Reference field effect transistor based on chemically modified ISFETs


Skowronska-Ptasinska, Maria and Wal, Peter D. van der and Berg, Albert van den and Bergveld, Piet and Sudhölter, Ernst J.R. and Reinhoudt, David N. (1990) Reference field effect transistor based on chemically modified ISFETs. Analytica Chimica Acta, 230 . pp. 67-73. ISSN 0003-2670

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Abstract:Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.

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Copyright:© 1990 Elsevier
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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