Piezoelectrically driven silicon beam force sensor

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Mullem, C.J. van and Blom, F.R. and Fluitman, J.H.J. and Elwenspoek, M. (1991) Piezoelectrically driven silicon beam force sensor. Sensors and Actuators A: Physical, 26 (1-3). pp. 379-383. ISSN 0924-4247

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Abstract:A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency f0 (f0 congruent 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.
Item Type:Article
Copyright:© 1991 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15255
Official URL:http://dx.doi.org/10.1016/0924-4247(91)87019-Y
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