A new technology for micromachining of silicon: dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

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Eijkel, C.J.M. and Branebjerg, J. and Elwenspoek, M. and Pol van de, F.C.M. (1990) A new technology for micromachining of silicon: dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures. IEEE Electron Device Letters, 11 (12). pp. 588-589. ISSN 0741-3106

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Abstract:The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO3 etching) and surface micromachining with sacrificial-layer techniques
Item Type:Article
Copyright:© 1990 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15222
Official URL:http://dx.doi.org/10.1109/55.63048
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