Optimization of the response of magnetoresistive elements

Share/Save/Bookmark

Eijkel, Kees J.M. and Fluitman, Jan H.J (1990) Optimization of the response of magnetoresistive elements. IEEE Transactions on Magnetics, 26 (1). pp. 311-321. ISSN 0018-9464

open access
[img]
Preview
PDF
1MB
Abstract:A way to optimize the output signal of a general thin-film magnetoresistive element with a homogeneous magnetization field as used in applications with a saturating external magnetic field is presented. The element is assumed to be operated by four-point measurement. In order to be able to compare different elements, a figure of merit is defined. The general theory of the anisotropic magnetoresistance (AMR) effect is treated, and a few general rules for optimization are formulated. It is concluded that in order to obtain a maximum signal voltage amplitude, the current density in the elements should be constant, i.e. not affected by the AMR effect. It is shown, that the AMR effect on the current density in the element usually cannot be neglected. Some special configurations of magnetoresistive elements are treated in detail. The problem of four point contacts in an infinitely wide thin film is solved analytically, with the aid of a special transformation. It is found, that there is an optimum thickness of the thin film in an AMR device, which depends on the material and the deposition technique. For pseudo-Hall elements, an optimum length-to-width ratio is found (≈1.35)
Item Type:Article
Copyright:© 1990 IEEE
Research Group:
Link to this item:http://purl.utwente.nl/publications/15220
Official URL:http://dx.doi.org/10.1109/20.50560
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 112095