Improved device performance by multistep or carbon co-implants

Liefting, Reinoud and Wijburg, Rutger C. and Custer, Jonathan S. and Wallinga, Hans and Saris, Frans W. (1994) Improved device performance by multistep or carbon co-implants. IEEE Transactions on Electron Devices, 41 (1). pp. 50-55. ISSN 0018-9383

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Abstract:	High-energy ion implantation is used for forming the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, give rise to an increased leakage current and to collector-emitter shorts. These shorts reduce the transistor yield. The use of multiple step implants or the introduction of a C gettering layer are demonstrated to avoid dislocation formation. Experimental results show that these schemes subsequently lower the leakage current and dramatically increase device yield. The presence of C can cause increased collector/substrate leakage, indicating that the C profile needs to be optimized with respect to the doping profiles
Item Type:	Article
Copyright:	©1994 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15188
Official URL:	http://dx.doi.org/10.1109/16.259619
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