Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model

Graaff de, H.C. and Kloosterman, W.J. (1995) Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model. IEEE Transactions on Electron Devices, 42 (2). pp. 274-282. ISSN 0018-9383

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Abstract:	A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it gives the voltage drop and stored minority carrier charge in the collector epilayer as a function of the bias conditions. It covers (total) depletion and quasi-saturation for both ohmic and space charge conditions in the end region of the epilayer. New features are that the collector current and stored charge are given as explicit analytical functions, thus guaranteeing continuity also for their derivatives, and that collector current spreading is taken into account
Item Type:	Article
Copyright:	© 1995 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15187
Official URL:	http://dx.doi.org/10.1109/16.370069
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