Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

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Luchies, J.R.M. and Kort de, C.G.M. and Verweij, J.F. (1995) Fast turn-on of an NMOS ESD protection transistor: measurements and simulations. Journal of Electrostatics, 36 (1). pp. 81-92. ISSN 0304-3886

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Abstract:The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current towards a displacement current-induced triggering, thereby lowering the trigger voltage. With our circuit simulation mode we are able to predict the outcome of human body model and charged device model testing.
Item Type:Article
Copyright:© 1995 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15186
Official URL:http://dx.doi.org/10.1016/0304-3886(95)00023-4
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