Improvement of device characteristics by multiple step implants or introducing a C gettering layer

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Wijburg, R.C.M. and Liefting, J.R. and Custer, J.S. and Wallinga, H. and Saris, F.W. (1992) Improvement of device characteristics by multiple step implants or introducing a C gettering layer. Microelectronic Engineering, 19 (1-4). pp. 543-546. ISSN 0167-9317

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Abstract:Ion implantation is used for realization of the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, can give rise to an increased leakage current and to collector-emitter shorts. Two methods are proposed to avoid dislocation formation. First, by using multiple step implants, and second, by application of a carbon gettering layer. Experimental results show that these schemes can lower leakage currents, and moreover dramatically increase device yield. However, the carbon profile needs a further optimization with respect to the quality of the collector-substrate junction.
Item Type:Article
Copyright:© 1992 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15164
Official URL:http://dx.doi.org/10.1016/0167-9317(92)90492-A
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