Modeling of VIPMOS hot electron gate currents

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Hemink, G.J. and Wijburg, R.C.M. and Wolbert, P.B.M. and Wallinga, H. (1991) Modeling of VIPMOS hot electron gate currents. Microelectronic Engineering, 15 (1-4). pp. 65-68. ISSN 0167-9317

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Abstract:A buried injector, which is biased by means of punch-through, can be used in substrate hot electron injection EEPROM devices [1]. In order to optimize this device an empirical expression for the injection probability as a function of the effective barrier height and the average electron energy is proposed and verified by measurements on a variety of devices.
Item Type:Article
Copyright:© 1991 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15155
Official URL:http://dx.doi.org/10.1016/0167-9317(91)90185-G
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Metis ID: 112029