VIPMOS-A novel buried injector structure for EPROM applications

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan and Wallinga, Hans and Mouthaan, Ton J. (1991) VIPMOS-A novel buried injector structure for EPROM applications. IEEE Transactions on Electron Devices, 38 (1). pp. 111-120. ISSN 0018-9383

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Abstract:	A buried injector is proposed as a source of electrons for substrate hot electrons injection. To enhance the compatibility with VLSI processing, the buried injector is formed by the local overlap of the n-well and p-well of a retrograde twin-well CMOS process. The injector is activated by means of punchthrough. This mechanism allows the realization of a selective injector without increasing the latchup susceptibility. The p-well profile controls the punchthrough voltage. The high injection probability and efficient electron supply mechanism lead to oxide current densities up to 1.0 Å.×cm-2. Programming times of 10 ¿s have been measured on nonoptimized cells. The realization of a structure for 5-V-only digital and analog applications is viable. A model of the structure for implementation in a circuit simulator, such as SPICE, is presented
Item Type:	Article
Copyright:	©1991 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15149
Official URL:	http://dx.doi.org/10.1109/16.65744
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