VIPMOS-A novel buried injector structure for EPROM applications

Share/Save/Bookmark

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan and Wallinga, Hans and Mouthaan, Ton J. (1991) VIPMOS-A novel buried injector structure for EPROM applications. IEEE Transactions on Electron Devices, 38 (1). pp. 111-120. ISSN 0018-9383

open access
[img]
Preview
PDF
1MB
Abstract:A buried injector is proposed as a source of electrons for substrate hot electrons injection. To enhance the compatibility with VLSI processing, the buried injector is formed by the local overlap of the n-well and p-well of a retrograde twin-well CMOS process. The injector is activated by means of punchthrough. This mechanism allows the realization of a selective injector without increasing the latchup susceptibility. The p-well profile controls the punchthrough voltage. The high injection probability and efficient electron supply mechanism lead to oxide current densities up to 1.0 Å.×cm-2. Programming times of 10 ¿s have been measured on nonoptimized cells. The realization of a structure for 5-V-only digital and analog applications is viable. A model of the structure for implementation in a circuit simulator, such as SPICE, is presented
Item Type:Article
Copyright:©1991 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/15149
Official URL:http://dx.doi.org/10.1109/16.65744
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 112023