Early resistance change and stress/electromigrationmodeling in aluminium interconnects

Petrescu, V. and Mouthaan, A.J. and Schoenmaker, W. (1997) Early resistance change and stress/electromigrationmodeling in aluminium interconnects. Microelectronics Reliability, 37 (10-11). pp. 1491-1494. ISSN 0026-2714

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Abstract:	A complete description for early resistance change and two dimensional simulation of mechanical stress evolution in confined Al interconnects, related to the electromigration, is given in this paper. The model, combines the stress/ vacancy concentration evolution with the early resistance change of the Al line, that could be [1] a fast technique for prediction of the MTF of a line compared to the conventional (accelerated) tests.
Item Type:	Article
Copyright:	© 1997 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15135
Official URL:	http://dx.doi.org/10.1016/S0026-2714(97)00093-0
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