W-CMP for sub-micron inverse metallisation


Kranenburg, Herma van and Corbach, Herman D. van and Woerlee, Pierre H. and Lohmeier, Martin (1997) W-CMP for sub-micron inverse metallisation. Microelectronic Engineering, 33 (1-4). pp. 239-246. ISSN 0167-9317

open access
Abstract:Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation rate of the polishing pad. To the first order Preston's equation is obeyed. The uniformity is best with equal rpm of pad and wafer and with perforated pads. Also, pattern density effects of CMP of W/PETEOS are investigated. Dishing increased at larger W-linewidth. Oxide erosion increased at larger pattern density and smaller W-linewidth. Electrical measurements on submicron (0.4 and 0.5 ¿m) test structures yielded good CMP results.
Item Type:Article
Copyright:© 1997 Elsevier Science
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/15129
Official URL:https://doi.org/10.1016/S0167-9317(96)00050-0
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 112001