Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

Lunenborg, M.M. and Graaff de, H.C. and Mouthaan, A.J. and Verweij, J.F. (1996) Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation. Microelectronics Reliability, 36 (11/12). pp. 1667-1670. ISSN 0026-2714

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Abstract:	The role of hot-carrier-induced interface states in NMOSFETs is discussed. A new model is proposed based on measurements in several 0.7¿m CMOS technologies of different suppliers. Our model for the first time enables accurate interface state prediction over many orders of magnitude in time for all stress conditions under pinch-off and incorporates saturation. It can easily be implemented in a reliability circuit simulator, enabling more accurate NMOSFET parameter degradation calculations(e.g. ¿ID ¿gm etc.).
Item Type:	Article
Copyright:	© 1996 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15127
Official URL:	http://dx.doi.org/10.1016/0026-2714(96)00170-9
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