Dielectric breakdown I: A review of oxide breakdown

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Verweij, J.F. and Klootwijk, J.H. (1996) Dielectric breakdown I: A review of oxide breakdown. Microelectronics Journal, 27 (7). pp. 611-622. ISSN 0026-2692

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Abstract:This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed.
Item Type:Article
Copyright:© 1996 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15126
Official URL:http://dx.doi.org/10.1016/0026-2692(95)00104-2
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Metis ID: 111998