Turn-on speed of grounded gate NMOS ESD protection transistors

Meneghesso, G. and Luchies, J.R.M. and Kuper, F.G. and Mouthaan, A.J. (1996) Turn-on speed of grounded gate NMOS ESD protection transistors. Microelectronics Reliability, 36 (11/12). pp. 1735-1738. ISSN 0026-2714

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Abstract:	The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. Furthermore it is shown that the CDM results of various protection layouts can be simulated with a SPICE model.
Item Type:	Article
Copyright:	© 1996 Elsevier Science
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/15124
Official URL:	http://dx.doi.org/10.1016/0026-2714(96)00186-2
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Metis ID: 111996