Improvements of deposited interpolysilicon dielectric characteristics with RTP N2O-anneal

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Klootwijk, J.H. and Weusthof, M.H.H. and Kranenburg van, H. and Woerlee, P.H. and Wallinga, H. (1996) Improvements of deposited interpolysilicon dielectric characteristics with RTP N2O-anneal. IEEE Electron Device Letters, 17 (7). pp. 358-359. ISSN 0741-3106

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Abstract:Nitridation of deposited instead of thermally grown oxides was studied to form high-quality inter-polysilicon dielectric layers for nonvolatile memories. It was found that by optimizing the texture and morphology of the polysilicon layers, and by optimizing the post-dielectric deposition-anneal, very high-quality dielectric layers can be obtained. In this paper, it is shown that not only for deposited gate oxides, but also for deposited inter-polysilicon oxides, rapid thermal annealing leads to previously unpublished improved electrical characteristics, like high charge to breakdown (Qbd≈20 C/cm2) and lower leakage currents. Moreover, the annealed dielectrics had less electron trapping when stressed
Item Type:Article
Copyright:©1996 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/15122
Official URL:http://dx.doi.org/10.1109/55.506366
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Metis ID: 111994