A general model to describe the electrostatic potential at electrolyte oxide interfaces
Hal van, R.E.G. and Eijkel, J.C.T. and Bergveld, P. (1996) A general model to describe the electrostatic potential at electrolyte oxide interfaces. Advances in Colloid and Interface Science, 69 (1-3). pp. 31-62. ISSN 0001-8686
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| Abstract: | Colloid chemists have proposed several theories to describe the charging mechanism of metal oxides in electrolyte solutions and the resulting electrical double layer at the oxide surface. In this paper a new general theory to describe the electrostatic potential at the metal oxide electrolyte solution interface is presented. This theory describes the variations of the electrostatic potential as a function of the differential double layer capacitance and the intrinsic buffer capacity. ISFET measurements are interpreted using this theory, and it is shown that these measurements can differentiate between the theories for the double layer and the theories for the charging mechanism for the oxide. |
| Item Type: | Article |
| Copyright: | © 1996 Elsevier Science |
| Faculty: | Electrical Engineering, Mathematics and Computer Science (EEMCS) |
| Research Group: | |
| Link to this item: | http://purl.utwente.nl/publications/15086 |
| Official URL: | http://dx.doi.org/10.1016/S0001-8686(96)00307-7 |
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Metis ID: 111969

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