Latest developments of the spin-valve transistor

Lodder, J.C. and Monsma, D.J. and Mollema, R.H. and Shimatsu, T. and Vlutters, R. (1997) Latest developments of the spin-valve transistor. Journal of Magnetism and Magnetic Materials, 175 (1-2). p. 159. ISSN 0304-8853

Preview

PDF
69Kb

Abstract:	The magnetic hysteresis associated with the magnetization reversal of the free layer in a spin valve is analysed. A model is proposed which assumes a single-domain behavior of the free layer, and a fixed magnetization of the pinned layer. The model is then developed in the framework of the Stoner¿Wohlfarth coherent rotation model, where geometrical solutions are obtained by the astroid method. According to the strength of the interlayer exchange coupling, the applied field direction and the anisotropy arrangement of the magnetic layers, a general classification of the hysteresis loops is proposed. Quantitative comparisons with experiments on spin valves (e.g. NiFe/Cu/NiFe/FeMn) are shown.
Item Type:	Article
Copyright:	© 1997 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/14965
Official URL:	http://dx.doi.org/10.1016/S0304-8853(97)00594-5
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 111892